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| Transistors with built-in Resistor UNR412x Series (UN412x Series) Silicon PNP epitaxial planar type Unit: mm For digital circuits Features * Costs can be reduced through downsizing of the equipment and reduction of the number of parts. * New S type package, allowing supply with the radial taping 4.00.2 (0.8) 3.00.2 2.00.2 Resistance by Part Number * * * * * * UNR4121 UNR4122 UNR4123 UNR4124 UNR412X UNR412Y (UN4121) (UN4122) (UN4123) (UN4124) (UN412X) (UN412Y) (R1) 2.2 k 4.7 k 10 k 2.2 k 0.27 k 3.1 k (R2) 2.2 k 4.7 k 10 k 10 k 5 k 4.6 k 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1 15.60.5 (0.8) 0.75 max. 7.6 2 3 1 1: Emitter 2: Collector 3: Base NS-B1 Package Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -500 300 150 -55 to +150 Unit V V mA mW C C Internal Connection R1 B R2 E C Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) UNR412X Collector-emitter cutoff current (Base open) UNR412X Emitter-base UNR4121 IEBO VEB = -6 V, IC = 0 ICEO VCE = -50 V, IB = 0 Symbol VCBO VCEO ICBO Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 Min -50 -50 -1 - 0.1 -1 - 0.5 -5 -2 -1 mA A Typ Max Unit V V A cutoff current UNR4122/412X/412Y (Collector open) UNR4123/4124 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00019BED 1 UNR412x Series Electrical Characteristics (continued) Ta = 25C 3C Parameter Forward current UNR4121 transfer ratio UNR4122/412Y UNR4123/4124 UNR412X Collector-emitter saturation voltage UNR412X UNR412Y Output voltage high-level Output voltage low-level Transition frequency Input resistance UNR4121/4124 UNR4122 UNR4123 UNR412X UNR412Y Resistance ratio UNR4124 UNR412X UNR412Y R1/R2 0.8 0.17 0.043 VOH VOL fT R1 VCE(sat) IC = -100 mA, IB = -5 mA IC = -10 mA, IB = - 0.3 mA IC = -50 mA, IB = -5 mA VCC = -5 V, VB = - 0.5 V, RL = 500 VCC = -5 V, VB = -3.5 V, RL = 500 VCB = -10 V, IE = 50 mA, f = 200 MHz -30% 200 2.2 4.7 10 0.27 3.1 1.0 0.22 0.054 0.67 1.2 0.27 0.065 +30% -4.9 - 0.2 Symbol hFE Conditions VCE = -10 V, IC = -100 mA Min 40 50 60 20 - 0.25 - 0.25 - 0.15 V V MHz k V Typ Max Unit Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 400 Total power dissipation PT (mW) 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) 2 SJH00019BED UNR412x Series Characteristics charts of UNR4121 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -240 Collector current IC (mA) -160 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -2 -4 -6 -8 -10 -12 -10 Forward current transfer ratio hFE -200 300 Ta = 75C -120 -1 Ta = 75C 25C 200 -80 - 0.1 -25C -10 -100 -1 000 100 25C -40 0 0 - 0.01 -1 -25C 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 12 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 10 Output current IO (A) 8 6 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 4 -10 - 0.1 2 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4122 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -300 Ta = 25C -100 VCE(sat) IC IC / IB = 10 160 VCE = -10 V hFE IC Ta = 75C Collector current IC (mA) -200 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -10 Forward current transfer ratio hFE -250 120 25C -150 -1 Ta = 75C 25C 80 -100 -25C 40 - 0.1 -25C -50 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00019BED 3 UNR412x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 20 Output current IO (A) 16 12 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 8 -10 - 0.1 4 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4123 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -240 VCE(sat) IC -100 Ta = 25C hFE IC 200 VCE = -10 V 25C Ta = 75C IC / IB = 10 Collector current IC (mA) -160 -120 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA -10 Forward current transfer ratio hFE -200 150 -1 Ta = 75C 25C 100 -25C -80 - 0.1 50 -40 - 0.2 mA - 0.1 mA -25C -10 -100 -1 000 0 -1 -10 -100 -1 000 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 20 Output current IO (A) 16 12 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 8 -10 - 0.1 4 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJH00019BED UNR412x Series Characteristics charts of UNR4124 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -300 Collector current IC (mA) -200 -150 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -10 Forward current transfer ratio hFE -250 300 Ta = 75C 200 25C -25C 100 -1 Ta = 75C 25C -100 - 0.1 -25C -10 -100 -1 000 -50 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 20 Output current IO (A) 16 12 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 8 -10 - 0.1 4 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR412X IC VCE -240 Ta = 25C Collector-emitter saturation voltage VCE(sat) (V) -100 VCE(sat) IC IC / IB = 10 240 hFE IC VCE = -10 V Collector current IC (mA) -160 IB = -1.6 mA -1.4 mA -1.2 mA -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA - 0.2 mA -10 Forward current transfer ratio hFE -200 200 160 Ta = 75C 25C 80 -25C -120 -1 Ta = 75C 25C -25C 120 -80 - 0.1 -40 40 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00019BED 5 UNR412x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 20 16 Input voltage VIN (V) -10 12 -1 8 - 0.1 4 0 -1 -10 -100 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR412Y IC VCE Collector-emitter saturation voltage VCE(sat) (V) -240 Ta = 25C VCE(sat) IC -100 IC / IB = 10 240 hFE IC VCE = -10 V Collector current IC (mA) IB = -1.2 mA -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA -40 - 0.2 mA 0 0 -2 -4 -6 -8 -10 -12 -10 -160 Forward current transfer ratio hFE -200 200 160 Ta = 75C 25C -25C -120 -1 Ta = 75C 25C -25C 120 -80 80 - 0.1 40 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 20 16 Input voltage VIN (V) -10 12 -1 8 - 0.1 4 0 -1 -10 -100 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) 6 SJH00019BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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